Preliminary Program
Monday, 02.12.2019
Pre-Evening Reception
16:00 – 19:00
Pre-Evening Event
Halloren- und Salinemuseum
Mansfelder Strasse 52, 06108 Halle
Tuesday, 03.12. 2019
Welcome
09:00 – 09:05 R. Knechtl Technical Chair Welcome and Openning
09:05 – 09:20 M. Petzold Local Chair / Fraunhofer IMWS Welcome by the Hosting Organisations and Introduction of Fraunhofer IMWS
Wafer Bonding Applications
09:20 – 09:40 S. Langa Fraunhofer IPMS
Fully integrated MEMS micro loudspeaker based on NED actuators and wafer level bonding
09:40 – 10:00 A. Tavassolizadeh X-FAB Al/Ge eutetic wafer bonding for MEMS/CMOS vacuum packaging
10:00 – 10:20
V. Dragoi
EV Group
GaN direct wafer bonding for power devices
10:20 – 11:00
Coffee Break
 
Low Temperature Bonding
11:00 – 11:20
T. Suga Meisei University Surface activate bonding (SAB) for GaN-diamond integration with high thermal boundary conductance
11:20 – 11:40 F. Selbmann Fraunhofer ENAS A high realiability low temperature 6” wafer level parylene bonding process for fully biocompatible microsystems
11:40 – 12:00 M. Fujino AIST Interfacial analysis of wafer-level bonding by neutron beam
12:00 – 12:20 N. Razek G-ray Medical & Industries Low temperature covalent GaAs/Si wafer bonding for X-ray imaging detectors
12:20 – 13:30
Lunch Break
 
Poster Flash Session
13:30 – 14:00
Poster Flash Session see poster section for details
Lobby Area
Wafer Level Packaging
14:00 – 14:20 G. Ross Aalto University Low Temperature Wafer-Level Cu-In-Sn Solid Liquid Interdiffusion Bonding for Low Stress Applications
14:20 – 14:40 S. Lemettre Univ. Paris Sud Low temperature hermetic TLP Cu/Sn bonding process for vacuum encapsulation of IR bolometers
14:40 – 15:00 F. Niklaus KTH Stockholm Wafer-level Vacuum Packaging by Ultra-thin Silicon Caps with Narrow Sealing Footprint
15:00 – 15:20 X.L.Wei Huazhong University Wafer-level MEMS packaging via simultaneous bonding of three layers
15:20 – 15:40
Coffee Break
 
Fundamentals - Part 1
15:40 – 16:00
A. Quellmalz KTH Stockholm Large-area transfer of CVD graphene by adhesive wafer bonding
16:00 – 16:20 H. Liangxing Nanyang Technological University Process Development and Reliability Study on Ar/N2 Plasma Activated Cu- Cu Wafer-Level Bonding
16:20 – 16:40 T. Saito Canon Anelva Corporation Novel Sputter Film Deposition to Fabricate Thick Oxide Films with Extremely Smooth Surface for Wafer Bonding
16:40 – 17:00 T. Matsumae AIST Hydrophilic direct bonding between Si and diamond (111) substrates
17:00 – 17:20 J. Visker IMEC Fusion bonding of 200mm quartz and silicon wafers: from full thickness to perforated thinned wafers with membrane
18:00 – 23:00
Social Program
 
Wednesday, 04.12.2019
Fundamentals - Part 2
09:00 – 09:20
V. Larrey Univ. Grenoble Alpes, CEA LETI Covalent bonding process for Si/Ge heterostructure manufacturing
09:20 – 09:40 A. Draisey AML
New UHV Wafer Bonding Tool
09:40 – 10:00 O. Bauder SUSS MicroTec High-Presicion Bonding For 300mm Wafer-To-Wafer (W2W) And Collective Die-To-Wafer (D2W) Bonding Applications
10:00 – 10:20
T. Shimatsu Tohoku University Atomic Diffusion Bonding of Wafers in Air using Thin Pt Films
10:20 – 10:40
Coffee Break
 
Characterization - Part 1
10:40 – 11:00 L. Michaud Univ. Grenoble Alpes Transfer and mechanics of silicon thin films on polymer
11:00 – 11:20 E. Deloffre STMicroelectronics Evaluation of hybrid bonding for 3D technology
11:20 – 11:40 S. Iacovo IMEC Wafer2Wafer Process Characterization and Monitoring using PWG Fizeau Interferometer
11:40 – 12:00 M. Goorsky UCLA The Electrical, Structural, and Thermal Properties of Wafer Bonded Group IV-based Surfaces and Bonded Junctions
12:00 – 12:20
C. Besançon
III-V Lab
Hydrophilic Direct Bonding of InP onto SiO2/Si for MOVPE Regrowth Applications: Kinetic Study of the Hydrogen Lateral Diffusion at High Temperature
12:20 – 13:20
Lunch Break
 
Micro Transfer Printing
13:20 – 13:40
S. Wicht X-FAB Microprince- Building A Pilot Line for Wafer Level Packaging Via Micro-Transfer-Printing At X-FAB
13:40 – 14:00 A. M. Fecioru X-Celeprint Advanced Heterogeneous Assembly Through Micro Transfer Printing
14:00 – 14:20 T. Jing Ghent University – imec Micro-Transfer-Printing for Photonic Integrated Circuits
14:20 – 14:40
Coffee Break
 
Characterization - Part 2
14:40 – 15:00
V.Larrey Univ. Grenoble Alpes, CEA, LETI Direct bonding interface closure characterization
15:00 – 15:20 M. Petzold Fraunhofer IMWS Understanding the reliability of stressed wafer bonded interfaces – the past and the future
15:20 – 15:40 R. Knechtel Technical Chair Closing Remarks
Lab Tours - Fraunhofer IMWS
16:00 – 17:30
Lab Tours
Fraunhofer IMWS
Heideallee 19, 06120 Halle
Posters
P1
K. Zoschke Fraunhofer IZM
Wafer Level Capping Approaches for MEMS Packaging enabled by Temporary and Permanent Bonding Technologies
P2
R. Knechtel Schmalkalden Univ. A.S. Ultra Long Term Wafer Bond Reliability Investigations
P3 S. Hertel Fraunhofer ENAS
Electroplating of Aluminum for Wafer Level Thermocompression Bonding
P4 G. Mauguen Univ. Grenoble Alpes, CEA, LETI Chemical cleaning for hybrid direct bonding
P5 M. Schikowski X-FAB Reduction of wafer to wafer misalignment by applying a low stress, sequential spacer removal
P6 V. Dragoi EV Group Low and room temperature direct wafer bonding methods: competitors or co- workers?
P7 J. Visker IMEC The effect of bow on runout and radial residuals
P8 K. Vogel Fraunhofer ENAS Wafer bonding with oxide based reactive multilayer systems
P9 F. Wittkaemper Leibniz-IPHT Development of a novel low temperature encapsulation process for ceramic housings using low temperature bonding glass
P10 C. Rothhardt Fraunhofer IOF Predicting bonding of substrates from flatness data
P11
M. Herms PVA TePla Stress evaluation and defect recognition in semiconductor wafers by SIRD